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- W2000114817 abstract "This paper investigates the low-frequency noise properties of multilayer WSe2 field effect transistors (FETs) in subthreshold, linear, and saturation regime. The measured noise power spectral density of drain current (SID) shows that the low-frequency noise in multilayer WSe2 FET fits well to a 1/fγ power law with γ ∼ 1 in the frequency range of 10 Hz–200 Hz. From the dependence of SID on the drain current, carrier mobility fluctuation is considered as a dominant low frequency noise mechanism from all operation regimes in multilayer WSe2 FET. Extracted Hooge's parameter in this study is within the value of 0.12, comparable to those of the transition metal dichalcogenide FETs in recent reports." @default.
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- W2000114817 date "2015-01-12" @default.
- W2000114817 modified "2023-09-26" @default.
- W2000114817 title "Low frequency noise characteristics in multilayer WSe2 field effect transistor" @default.
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- W2000114817 doi "https://doi.org/10.1063/1.4906141" @default.
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