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• W2000149510 abstract "Results achieved on the operation of short-wavelength InGaAlP visible-light laser diodes are described. It is found that there is a strong correlation between operation temperature and oscillation wavelength. The deterioration of favorable temperature characteristics in the short-wavelength region is attributed to an increase in the leakage current, which originates in a small conduction-band discontinuity inherent in the InGaAlP material system. The introduction of a highly doped p-cladding layer improves these temperature characteristics. Short-wavelength oscillation at 630-nm-band wavelength was achieved for transverse-mode stabilized InGaAlP lasers.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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• W2000149510 date "1991-06-01" @default.
• W2000149510 modified "2023-10-18" @default.
• W2000149510 title "Short-wavelength InGaAlP visible laser diodes" @default.
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• W2000149510 doi "https://doi.org/10.1109/3.89966" @default.
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