FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2000178462> ?p ?o ?g. }

• W2000178462 endingPage "5566" @default.
• W2000178462 startingPage "5557" @default.
• W2000178462 abstract "In this study the fabrication and characterization of Ni/10ScSZ (Ni/10 mol% Sc2O3–90 mol% ZrO2) and Ni/10Sc1CeSZ (Ni/10 mol% Sc2O3–1 mol% CeO2–89 mol% ZrO2) cermet anode films was studied and compared. Both 10ScSZ and 10Sc1CeSZ electrolyte powders showed tetragonal and cubic phases at room temperature, respectively. The NiO/10ScSZ and NiO/10Sc1CeSZ composites with 10–60 vol% of Ni content were prepared by mixing as-received commercial powders of NiO, 10ScSZ and 10Sc1CeSZ followed by ink preparation. Samples were sintered for 1 h at temperatures of 1250–1350 °C. All the cermet films were then reduced under a mixture of hydrogen (10%) and nitrogen (90%) at 800 °C for 2 h. The effect of Ni content and sinter temperature on the DC electrical conductivity were investigated, and the results showed a sharp change in conductivity at around 30 vol% Ni, corresponding to continuity/discontinuity of the Ni–Ni contact network, and the conductivity increased as the sinter temperature increased from 1250 to 1350 °C. An acceptable electrical conductivity at 700 °C for these cermet films was obtained at >40 vol% Ni, consistent with behaviour reported for more conventional Ni/YSZ cermets. The effect of sinter temperature on the microstructure and porosity of Ni/10Sc1CeSZ and Ni/10ScSZ cermet films was also investigated. This revealed that the porosity of the cermet films with the same Ni content decreased as the sinter temperature increased and that, for a given sinter temperature, the porosity of the cermet films increased with Ni content. The porosities of 40Ni/60ScCeSZ (40 vol% Ni/60 vol% 10Sc1CeSZ) and 40Ni/60ScSZ (40 vol% Ni/60 vol% 10ScSZ) anodes sintered at 1250, 1300 and 1350 °C for 1 h were in the range of 30–45%. Electrochemical measurement of symmetrical cells using an 8YSZ electrolyte at 700 °C revealed that the lowest electrode polarization resistance of 40Ni/60ScCeSZ and 40Ni/60ScSZ anodes was obtained at sinter temperatures of 1350 °C and 1300 °C respectively. Carbon deposition over 40Ni/60ScCeSZ, 40Ni/60ScSZ and 40Ni/60YSZ catalysts was evaluated at 700 °C for 1 h at S/C = 0.8 and the results showed that the ratio of deposited carbon was lower in the case of Ni/10ScSZ and Ni/10Sc1CeSZ compared to Ni/YSZ (0.35). Overall, Ni/10Sc1CeSZ and Ni/10ScSZ cermets having 40 vol% Ni were found to be optimum, with the 40Ni/60ScCeSZ cermet proving to be better than 40Ni/60ScSZ cermet in terms of both electronic conductivity and electrode polarization resistance, with both materials exhibiting improved tolerance towards carbon deposition compared to Ni/YSZ." @default.
• W2000178462 created "2016-06-24" @default.
• W2000178462 creator A5024746695 @default.
• W2000178462 creator A5032210827 @default.
• W2000178462 creator A5035580795 @default.
• W2000178462 creator A5069394387 @default.
• W2000178462 creator A5071873097 @default.
• W2000178462 date "2011-05-01" @default.
• W2000178462 modified "2023-09-27" @default.
• W2000178462 title "Fabrication and characterization of Ni/ScSZ cermet anodes for IT-SOFCs" @default.
• W2000178462 cites W1971333714 @default.
• W2000178462 cites W1978852209 @default.
• W2000178462 cites W1999158025 @default.
• W2000178462 cites W1999538528 @default.
• W2000178462 cites W2005178236 @default.
• W2000178462 cites W2014903017 @default.
• W2000178462 cites W2019129108 @default.
• W2000178462 cites W2034371669 @default.
• W2000178462 cites W2039328892 @default.
• W2000178462 cites W2042286599 @default.
• W2000178462 cites W2049145322 @default.
• W2000178462 cites W2068070086 @default.
• W2000178462 cites W2078689258 @default.
• W2000178462 cites W2081451741 @default.
• W2000178462 cites W2084760466 @default.
• W2000178462 cites W2111419530 @default.
• W2000178462 cites W2111644863 @default.
• W2000178462 cites W2137060558 @default.
• W2000178462 cites W2163200809 @default.
• W2000178462 cites W2197959096 @default.
• W2000178462 cites W2231685752 @default.
• W2000178462 cites W2521476954 @default.
• W2000178462 doi "https://doi.org/10.1016/j.ijhydene.2011.01.151" @default.
• W2000178462 hasPublicationYear "2011" @default.
• W2000178462 type Work @default.
• W2000178462 sameAs 2000178462 @default.
• W2000178462 citedByCount "64" @default.
• W2000178462 countsByYear W20001784622012 @default.
• W2000178462 countsByYear W20001784622013 @default.
• W2000178462 countsByYear W20001784622014 @default.
• W2000178462 countsByYear W20001784622015 @default.
• W2000178462 countsByYear W20001784622016 @default.
• W2000178462 countsByYear W20001784622017 @default.
• W2000178462 countsByYear W20001784622018 @default.
• W2000178462 countsByYear W20001784622019 @default.
• W2000178462 countsByYear W20001784622020 @default.
• W2000178462 countsByYear W20001784622021 @default.
• W2000178462 countsByYear W20001784622022 @default.
• W2000178462 countsByYear W20001784622023 @default.
• W2000178462 crossrefType "journal-article" @default.
• W2000178462 hasAuthorship W2000178462A5024746695 @default.
• W2000178462 hasAuthorship W2000178462A5032210827 @default.
• W2000178462 hasAuthorship W2000178462A5035580795 @default.
• W2000178462 hasAuthorship W2000178462A5069394387 @default.
• W2000178462 hasAuthorship W2000178462A5071873097 @default.
• W2000178462 hasConcept C127413603 @default.
• W2000178462 hasConcept C134132462 @default.
• W2000178462 hasConcept C134646822 @default.
• W2000178462 hasConcept C147789679 @default.
• W2000178462 hasConcept C159985019 @default.
• W2000178462 hasConcept C161790260 @default.
• W2000178462 hasConcept C17525397 @default.
• W2000178462 hasConcept C185592680 @default.
• W2000178462 hasConcept C191897082 @default.
• W2000178462 hasConcept C192562407 @default.
• W2000178462 hasConcept C2777581544 @default.
• W2000178462 hasConcept C42360764 @default.
• W2000178462 hasConcept C55493867 @default.
• W2000178462 hasConcept C6648577 @default.
• W2000178462 hasConcept C68801617 @default.
• W2000178462 hasConcept C74575197 @default.
• W2000178462 hasConcept C87976508 @default.
• W2000178462 hasConcept C89395315 @default.
• W2000178462 hasConceptScore W2000178462C127413603 @default.
• W2000178462 hasConceptScore W2000178462C134132462 @default.
• W2000178462 hasConceptScore W2000178462C134646822 @default.
• W2000178462 hasConceptScore W2000178462C147789679 @default.
• W2000178462 hasConceptScore W2000178462C159985019 @default.
• W2000178462 hasConceptScore W2000178462C161790260 @default.
• W2000178462 hasConceptScore W2000178462C17525397 @default.
• W2000178462 hasConceptScore W2000178462C185592680 @default.
• W2000178462 hasConceptScore W2000178462C191897082 @default.
• W2000178462 hasConceptScore W2000178462C192562407 @default.
• W2000178462 hasConceptScore W2000178462C2777581544 @default.
• W2000178462 hasConceptScore W2000178462C42360764 @default.
• W2000178462 hasConceptScore W2000178462C55493867 @default.
• W2000178462 hasConceptScore W2000178462C6648577 @default.
• W2000178462 hasConceptScore W2000178462C68801617 @default.
• W2000178462 hasConceptScore W2000178462C74575197 @default.
• W2000178462 hasConceptScore W2000178462C87976508 @default.
• W2000178462 hasConceptScore W2000178462C89395315 @default.
• W2000178462 hasIssue "9" @default.
• W2000178462 hasLocation W20001784621 @default.
• W2000178462 hasOpenAccess W2000178462 @default.
• W2000178462 hasPrimaryLocation W20001784621 @default.
• W2000178462 hasRelatedWork W2033451903 @default.
• W2000178462 hasRelatedWork W2089753981 @default.
• W2000178462 hasRelatedWork W2219169289 @default.

• next