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- W2000201224 abstract "Transport properties of electrons in antidot superlattices are studied in Si/Ge heterostructures. Lateral superlattices with periods between 830 and 500 nm were imposed upon high-mobility two-dimensional electron gases in Si/${mathrm{Si}}_{0.7}$${mathrm{Ge}}_{0.3}$ heterostructures by means of laser holography and reactive ion etching. Typical features known from GaAs/${mathrm{Al}}_{mathit{x}}$${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathit{x}}$As samples, such as low-field commensurability oscillations in the longitudinal resistivity ${mathrm{ensuremath{rho}}}_{mathit{x}mathit{x}}$, additional nonquantized Hall plateaus, and quenching of the Hall effect around B=0, are observed. From the position of the commensurability maxima in ${mathrm{ensuremath{rho}}}_{mathit{x}mathit{x}}$ we conclude that the lateral potential is rather smooth." @default.
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- W2000201224 date "1994-09-15" @default.
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- W2000201224 title "Electron transport through antidot superlattices in Si/<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Si</mml:mi></mml:mrow><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>Ge</mml:mi></mml:mrow><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub></mml:…" @default.
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- W2000201224 doi "https://doi.org/10.1103/physrevb.50.8853" @default.
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