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- W2000204990 abstract "AsSi alloy layers were obtained by implantation of high fluence As+ ions on (100) oriented silicon substrates, with a substitutional arsenic concentration within the range 10–12.6 at.%. Pulsed laser irradiation of these samples may produce the quenching of amorphous or crystalline layers depending on the resolidification velocity. The SiAs alloy exhibits a dramatic reduction in the critical velocity for obtaining an amorphous layer compared with that of pure silicon. For the 12.6 at.% alloy a critical velocity of 3 m s−1 was calculated for the (100) oriented substrate, which is much lower than that required for pure silicon (15 m s−1). Detailed measurements as a function of arsenic concentration are presented and a thermodynamic explanation is also attempted." @default.
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- W2000204990 date "1988-12-01" @default.
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- W2000204990 title "Laser quenching of SiAs alloy" @default.
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- W2000204990 doi "https://doi.org/10.1016/0022-5088(88)90274-3" @default.
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