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- W2000206826 abstract "We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs−Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures." @default.
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- W2000206826 date "2005-06-28" @default.
- W2000206826 modified "2023-10-14" @default.
- W2000206826 title "Mass Transport Model for Semiconductor Nanowire Growth" @default.
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- W2000206826 doi "https://doi.org/10.1021/jp051702j" @default.
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