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- W2000207439 abstract "We propose a plasmonic waveguide with semiconductor gain material for optoelectronic integrated circuits. We analyze properties of a finite-thickness metal–semiconductor–metal (F-MSM) waveguide to be utilized as an ultra-compact and fast plasmonic modulator. The InP-based semiconductor core allows electrical control of signal propagation. By pumping the core we can vary the gain level and thus the transmittance of the whole system. The study of the device was made using both analytical approaches for planar two-dimensional case as well as numerical simulations for finite-width waveguides. We analyze the eigenmodes of the F-MSM waveguide, propagation constant, confinement factor, Purcell factor, absorption coefficient, and extinction ratio of the structure. We show that using thin metal layers instead of thick ones we can obtain higher extinction ratio of the device." @default.
- W2000207439 created "2016-06-24" @default.
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- W2000207439 date "2013-11-01" @default.
- W2000207439 modified "2023-10-16" @default.
- W2000207439 title "Plasmonic finite-thickness metal–semiconductor–metal waveguide as ultra-compact modulator" @default.
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- W2000207439 doi "https://doi.org/10.1016/j.photonics.2013.07.009" @default.
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