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• W2000217838 abstract "Electromigration (EM) in power distribution network (PDN) is a major reliability issue in 3D ICs. While the EM issues of local vias and through-silicon-vias (TSV) have been studied separately, the interplay of TSVs and conventional local vias in 3D ICs has not been well investigated. This co-design is necessary when the die-to-die vertical power delivery is done using both TSVs and local interconnects. In this work, we model EM for PDN of 3D ICs with a focus on multi-scale via structure, i.e., TSVs and local vias used together for vertical power delivery. We study the impact of structure, material, and pre-existing void conditions on EM-related lifetime of our multi-scale via structures. Experimental results demonstrate that our EM modeling can effectively capture the EM reliability of the entire multi-scale via in 3D PDN, which can be hard to achieve by the traditional EM analysis based on the individual local via or TSV." @default.
• W2000217838 created "2016-06-24" @default.
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• W2000217838 date "2013-11-18" @default.
• W2000217838 modified "2023-09-28" @default.
• W2000217838 title "Electromigration study for multi-scale power/ground vias in TSV-based 3D ICs" @default.
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• W2000217838 doi "https://doi.org/10.5555/2561828.2561904" @default.
• W2000217838 hasPublicationYear "2013" @default.
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