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• W2000219986 abstract "Experiments giving impurity-induced lattice distortion can measure quite distinct quantities. In particular EXAFS (extended X-ray fine structure) measures nearest-neighbour distances, whereas both volume changes and recent spectroscopic data measure long-range displacements. The relationship between the two depends strongly on the inter-atomic potential. The authors analyse this for impurities in silicon by adopting a variety of current potentials. There is a significant contradiction between the EXAFS results and the other experiments for all of the inter-atomic potentials. This problem may be associated with the high oxygen concentrations of Czochralski crystals used in the EXAFS study." @default.
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• W2000219986 date "1988-09-20" @default.
• W2000219986 modified "2023-09-29" @default.
• W2000219986 title "Local distortions and volume changes in semiconductors: donors in silicon" @default.
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• W2000219986 doi "https://doi.org/10.1088/0022-3719/21/26/016" @default.
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