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- W2000222767 abstract "We demonstrated a nanocontacting scheme using a focus ion beam (FIB) system without further heat treatment for ZnO nanowires. This scheme includes Ga ion surface modification and direct-write Pt deposition induced by Ga ion, leading to an Ohmic nanocontact with a specific contact resistance as low as 2.5 × 10−6 Ω cm2. Temperature-dependent measurements show that the transport of the FIB-Pt contact on the ZnO nanowire with local surface modification is governed by field emission tunneling. Taking advantage of area-selected and room-temperature processes, Ga ion surface modification and direct-write Pt deposition using a FIB system demonstrates a feasible Ohmic scheme." @default.
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- W2000222767 date "2012-01-01" @default.
- W2000222767 modified "2023-10-17" @default.
- W2000222767 title "Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example" @default.
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- W2000222767 doi "https://doi.org/10.1039/c2nr30688c" @default.
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