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- W2000224033 abstract "The growth mode of ZnSe epilayers prepared by pulsed molecular beam epitaxy (MBE) on Si(1 1 1) substrates, irradiated with a plasma of nitrogen (N-plasma) prior to the deposition, was compared to that of ZnSe epilayers prepared by conventional MBE directly on untreated Si substrates. Spotty reflection high-energy electron diffraction (RHEED) patterns with a diffuse background were observed during the initial stages of the conventional MBE growth. In sharp contrast, the RHEED patterns during the pulsed MBE growth on the N-plasma treated Si surface showed very well-defined streaks, and moreover a two-fold reconstruction was observed indicating an atomically flat surface. A strong evidence of the improved epitaxy, and the two-dimensional nucleation obtained by this technique was the clear presence of large amplitude RHEED oscillations. AFM images confirmed a flatter ZnSe surface for this sample." @default.
- W2000224033 created "2016-06-24" @default.
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- W2000224033 date "1999-05-01" @default.
- W2000224033 modified "2023-09-26" @default.
- W2000224033 title "Two-dimensional growth mode promotion of ZnSe on Si(111) by using a nitrogen substrate surface treatment" @default.
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- W2000224033 doi "https://doi.org/10.1016/s0022-0248(98)01394-3" @default.
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