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- W2000232549 abstract "Transmission electron microscopy is used to study the structure of residual defects in arsenic-phosphorus-, and boron-implanted silicon crystals in dependence on the implantation dose (5 × 1013 to 5 × 1016 cm−2) and on the temperature of the subsequent flash lamp annealing. As pulse duration 10ms are choosen and the temperature is varied between 750 and 1350 °C. Compared with samples conventionally annealed differences mainly occur in the defect densities and are caused by the reduced influence of the annealing atmosphere during flash lamp annealing. Transmissions-Elektronenmikroskopie wird benutzt, um die Struktur Von Bestdefekten in Arsen-, Phosphor- und Bor-implantiertem Silizium in Abhängigkeit Von der Implantationsdosis (5 × 1013 bis 5 × 1016 cm−2) und der Temperatur der anschließenden Blitzlampenausheilung zu untersuchen. Für die Pulsdauer werden 10 ms gewählt, und die Temperatur wird zwischen 750 und 1350 °C variiert. Unterschiede zu konventionell ausgeheilten Proben treten hauptsächlich bei den Defektkonzentrationen auf und sind auf den verminderten Einfluß der Ausheilatmosphäre bei der Blitzlampenausheilung zurückzuführen." @default.
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- W2000232549 date "1987-08-16" @default.
- W2000232549 modified "2023-09-25" @default.
- W2000232549 title "Residual Defects after Light Pulse Annealing of Implanted Silicon" @default.
- W2000232549 cites W1983937378 @default.
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- W2000232549 doi "https://doi.org/10.1002/pssa.2211020228" @default.
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