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- W2000234737 abstract "ABSTRACT In order to improve line width roughness (LWR) of chemically amplified resists (CARs) without trade-offs with other lithographic performances such as exposure latitude (EL) and sensitivity, we investigated effects of the spatial fluctuation of sensitivity on LWR of ArF resists. Compared a statistical model with experiments, it was clarified that LWR of ArF resists was caused by the fluctuation of sensitivity due to the fluctuation of the PAG and quencher concentration. Furthermore, we developed novel photoactive materials such as a transparent PAG and an nPAG-1Aminewhich were predicted to be useful for reducing the statistical fluctuation of sensitivity by the theoretical model. LWR was successfully improved using these photoactive materials. This study not only provided new insight into the root cause of LWR, but also proved efficacy of the theory-based material design. Keywords: ArF lithography, chemically amplified resist material, line width roughness (LWR), line edge roughness (LER), statistical fluctuation of sens itivity, transparent photo acid generator, nPAG-1Amine" @default.
- W2000234737 created "2016-06-24" @default.
- W2000234737 creator A5061169569 @default.
- W2000234737 creator A5073708221 @default.
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- W2000234737 date "2015-03-20" @default.
- W2000234737 modified "2023-09-23" @default.
- W2000234737 title "Effects of the statistical fluctuation of PAG and quencher on LWR of ArF resists" @default.
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- W2000234737 doi "https://doi.org/10.1117/12.2085751" @default.
- W2000234737 hasPublicationYear "2015" @default.
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