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• W2000235098 abstract "We report on metalorganic vapour phase epitaxy (MOVPE) growth of the IIa-VI compound MgTe and the variable band gap ternary semiconductor Zn1-xMgxTe. Bulk MgTe shows wurtzite type structure and is a direct band gap material ( ≈3.5 eV). The precursors used in this study were diisopropyltellurium (DIPTe), diethylzinc (DEZn) and bis-methylcyclopentadienylmagnesium (MCP2Mg). The growth of MgTe on (100) GaAs substrates was found to be polycrystalline. The films were very quickly degraded by hydratation, even if they were covered by a ZnTe film. Zn1-xMgxTe epitaxial layers on (100) GaAs were grown with a Mg concentration of 0<x<0.6. In that range of composition they appeared stable in air. For 0<x<0.5, the thin films showed zincblende structure and followed Vegard's law. The crystalline parameters were determined by the measurement of the relative position of the (004) X-ray reflection of the substrate and of the layer. The crystalline quality of the layers of Zn1-xMgxTe alloys was comparable to pure ZnTe. Photoluminescence measurements exhibited a deep emission in the green region." @default.
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• W2000235098 date "1994-12-01" @default.
• W2000235098 modified "2023-10-17" @default.
• W2000235098 title "Metalorganic vapour phase epitaxy growth of Zn1-xMgxTe layers" @default.
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• W2000235098 doi "https://doi.org/10.1016/0022-0248(94)91104-5" @default.
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