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- W2000237660 abstract "A new fabrication process for mold-type SiC sharp tips for field-emission arrays has been presented. Gated emitters have been fabricated in a multi-step process using the transfer-mold technique. Gates were made of heavily boron-doped silicon, and a boron etch-stop technique for the KOH anisotropic etching was applied. The critical points of the fabrication process: anodic bonding of the silicon covered with a thin-film multi-layer of silicon oxide and boron-doped silicon carbide have been discussed in detail. The new method can be applied in the fabrication of double-gate mold-type emitters able to emit convergent electron beams." @default.
- W2000237660 created "2016-06-24" @default.
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- W2000237660 date "2004-05-15" @default.
- W2000237660 modified "2023-09-24" @default.
- W2000237660 title "Mold-type SiC field emitters with heavily boron-doped gates" @default.
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- W2000237660 doi "https://doi.org/10.1088/0960-1317/14/7/010" @default.
- W2000237660 hasPublicationYear "2004" @default.
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