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• W2000239370 abstract "Transport studies of patterned Au∕ZnSe(001) contacts fabricated by molecular beam epitaxy reveal substantial lateral inhomogeneities in the Schottky barrier height. The x-ray photoemission results provide evidence of chemical reactions at a number of preferential surface sites. Incorporation of ultrathin Zn interlayers between the ZnSe substrate and the Au overlayer decreases the value of the n-type Schottky barrier height from 1.62to1.05eV and eliminates all evidence of lateral inhomogeneities in the barrier height. The interlayer-induced Schottky barrier tunability is found to be primarily limited by Zn–Au alloying within the overlayer." @default.
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• W2000239370 date "2006-04-25" @default.
• W2000239370 modified "2023-09-26" @default.
• W2000239370 title "Controlling interface reactivity and Schottky barrier height in Au∕ZnSe(001) junctions" @default.
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• W2000239370 doi "https://doi.org/10.1116/1.2194944" @default.
• W2000239370 hasPublicationYear "2006" @default.
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