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• W2000243923 abstract "Abstract Deep Level Transient Spectroscopy (DLTS) has been used to study defects formed in bulk silicon after implantation of 8.3 MeV 28 Si 3+ ions at room temperature. For this study, Schottky diodes prepared from n -type Czohralski-grown silicon wafers have been implanted in the single ion regime up to fluence value of 1 × 10 10  cm −2 utilizing the scanning focused ion microbeam as implantation tool and the Ion Beam Induced Current (IBIC) technique for ion counting. Differential DLTS analysis of the vacancy-rich region in self-implanted silicon reveals a formation of the broad vacancy-related defect state(s) at E c −0.4 eV. Direct measurements of the electron capture kinetics associated with this trap at E c −0.4 eV, prior to any annealing do not show an exponential behaviour typical for the simple point-like defects. The logarithmic capture kinetics is in accordance with the theory of majority carrier capture at extended or cluster-related defects. We have detected formation of two deep electron traps at E c −0.56 eV and E c −0.61 eV in the interstitial-rich region of the self-implanted silicon, before any annealing. No DLTS signal originating from vacancy-oxygen trap at E c −0.17 eV, present in the sample irradiated with 0.8 MeV neutrons, has been recorded in the self-implanted sample." @default.
• W2000243923 created "2016-06-24" @default.
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• W2000243923 date "2014-08-01" @default.
• W2000243923 modified "2023-10-18" @default.
• W2000243923 title "Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon" @default.
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• W2000243923 doi "https://doi.org/10.1016/j.nimb.2014.02.082" @default.
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