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- W2000248859 abstract "The optical and transport properties of As-doped ZnO films are examined. The films are grown by pulsed-laser deposition using As2O3 as the source of As and O3/O2 as the oxidant. The films are epitaxial, single phase, and oriented in the ZnO [002] direction. Low temperature photoluminescence spectra at 20 K show for the formation of acceptor states associated with the As, although Hall measurements indicate that the films doped with 0.2 at% As are n-type. From the photoluminescence spectra, the binding energy of the As-related acceptor was estimated to be 155 meV. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2000248859 date "2008-07-01" @default.
- W2000248859 modified "2023-10-18" @default.
- W2000248859 title "Acceptor state formation in arsenic-doped ZnO films grown using ozone" @default.
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- W2000248859 doi "https://doi.org/10.1002/pssa.200723663" @default.
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