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- W2000251801 endingPage "024004" @default.
- W2000251801 startingPage "024004" @default.
- W2000251801 abstract "Heteroepitaxial nonpolar and semipolar III-nitride films contain numerous structural defects which prevent their use for the development of efficient optoelectronic devices. After a description of the microstructure of such films, this paper reviews the different techniques which have been developed to reduce the densities of the different types of defects. The choice of a well-adapted substrate is discussed. The effect of the introduction of an interlayer is reported. Then, techniques based on the introduction of a 3D growth stage are evaluated. Finally, the original methods based on the growth on inclined facets are described and assessed." @default.
- W2000251801 created "2016-06-24" @default.
- W2000251801 creator A5056912849 @default.
- W2000251801 date "2012-01-19" @default.
- W2000251801 modified "2023-09-29" @default.
- W2000251801 title "Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar and semipolar orientations" @default.
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- W2000251801 doi "https://doi.org/10.1088/0268-1242/27/2/024004" @default.
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