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• W2000251941 abstract "Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiOx). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300 °C in a vacuum ambient. As the annealing temperature increases from 300 °C to 450 °C, the mobility increases drastically from 0.07 cm2/Vs to 0.61 cm2/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta5+ ions that can act as electron donors." @default.
• W2000251941 created "2016-06-24" @default.
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• W2000251941 date "2013-11-18" @default.
• W2000251941 modified "2023-10-06" @default.
• W2000251941 title "The effect of Ta doping in polycrystalline TiOx and the associated thin film transistor properties" @default.
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• W2000251941 doi "https://doi.org/10.1063/1.4831783" @default.
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