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• W2000259807 abstract "The fact that single-crystal Si would make an ideal material for thin-film transistor devices has long been recognized. Despite this awareness, a viable method by which such a material could be directly produced on a glass substrate has never been formulated. In this letter, it is shown experimentally that location-controlled single-crystal Si regions on a SiO2 surface can be obtained in a glass-substrate compatible manner, via excimer-laser-based sequential lateral solidification of thin Si films using a beamlet shape that self-selects and extends a single grain over an arbitrarily large area. This is accomplished by controlling the locations, shape, and extent of melting induced by the incident excimer-laser pulses, in such a manner as to induce interface-contour-affected sequential super-lateral growth of crystals, during which the tendency of grain boundaries to align approximately orthogonal to the solidifying interface is systematically exploited." @default.
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• W2000259807 date "1997-06-23" @default.
• W2000259807 modified "2023-10-18" @default.
• W2000259807 title "Single-crystal Si films for thin-film transistor devices" @default.
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• W2000259807 doi "https://doi.org/10.1063/1.119194" @default.
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