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• W2000264560 abstract "Buried gate type p-base n-emitter soft contact (PNSC) structure 4 kV static induction thyristors (SIThys) have been fabricated in order to make thyristors for high-speed turn-on applications to such as high energy accelerators. It was found that these static induction thyristors could be fabricated under the test pilot line with a good device production yield. The static characteristics and pulse switching characteristics of these static induction thyristors are examined. Several application examples of the present 4 kV static induction thyristors to power supplies for high energy accelerators are shown." @default.
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• W2000264560 date "2006-09-01" @default.
• W2000264560 modified "2023-10-09" @default.
• W2000264560 title "High speed turn-on reverse conducting 4kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators" @default.
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• W2000264560 doi "https://doi.org/10.1016/j.sse.2006.08.014" @default.
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