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- W2000264963 abstract "We have simulated the profile of the potential barrier at the metal-semiconductor interface supposing that interface charges are due to electronic states whose distribution m energy is discrete and whose density decreases exponentially inside the semiconductor. The effective barrier height is evaluated by taking into account the possibility of tunnel effect through very sharp barriers near the interface. A quantitative and systematic study is made to clarify the conditions in which Schottky barrier height is independent of the metal work function. Instead of introducing an insulating layer in order to separate the metal and the semiconductor, we show that a «buffer layer» which results from the interface states penetration has a similar effect on the Fermi level stabilization. It is also demonstrated from the comparison between two types (n and p) of semiconductor material that violations of the relation E g =Φ Bn +Φ Bp are possible Simulation du profil de la barriere de potentiel dans une interface metal-semiconducteur en tenant compte de la presence d'etats electroniques caracterises par un niveau d'energie discret et une densite exponentiellement decroissante en direction du volume du semiconducteur; etude systematique du role joue par les parametres des etats d'interface (position, densite, profondeur de penetration); possibilite de violation de la regle Eg=Φ Bn +Φ Bp" @default.
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- W2000264963 date "1987-01-01" @default.
- W2000264963 modified "2023-09-26" @default.
- W2000264963 title "Conséquences d'une distribution spatiale des états d'interface sur la barrière de Schottky" @default.
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- W2000264963 doi "https://doi.org/10.1051/rphysap:0198700220100116900" @default.
- W2000264963 hasPublicationYear "1987" @default.
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