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- W2000265833 abstract "Individual trapped charge creations and a trap number in p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) under negative bias temperature instability (NBTI) stress are investigated. We find that the characteristic times of a trapped charge creation scatter over several decades of time in small area pMOSFETs, which is attributed to an activation energy distribution in the reaction-diffusion (RD) model of NBTI. We develop a statistical model by combining the RD model with an extracted activation energy distribution to calculate a threshold voltage shift distribution at different NBTI stress times. Our model agrees with measured results very well." @default.
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- W2000265833 date "2012-08-20" @default.
- W2000265833 modified "2023-09-26" @default.
- W2000265833 title "Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress" @default.
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- W2000265833 doi "https://doi.org/10.1063/1.4748108" @default.
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