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- W2000275350 abstract "Single crystal samples of PbMoO4 with a 〈100〉 orientation have been investigated by DTA, chemical etching, and thermal treatments at 950°C for various annealing times. Surface morphologies of chemically and thermally etched {;100}; surfaces have been studied in detail in respect of microstructure, etch pit dimension, defect type and density. It is found that both chemical and thermal etching techniques reveal a similar radial defect-distribution pattern on the {;100}; surfaces while DTA shows a small compositional variation along the radial and axial directions. The correlation between two types of etch pits has been addressed. For thermally etched samples, a kinetic study on the rectangular vacancy island (thermal etch pit) formation and self-depletion has been presented. Based on the current work, the formation rate of the vacancy islands can be expressed as D2x − D20 = k0t1.32exp(− EaRT). Mechanisms regarding the vacancy island formation and self-depletion upon the heat treatment have also been proposed. The current study on the post-growth heat treatment has also identified key processing parameters to improve overall crystal quality." @default.
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- W2000275350 date "1996-03-01" @default.
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- W2000275350 title "Rectangular vacancy island formation and self-depletion in Czochralski-grown PbMoO4 single crystal during heat treatment" @default.
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- W2000275350 doi "https://doi.org/10.1016/0022-0248(95)00893-4" @default.
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