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• W2000281292 abstract "Abstract The growth, crystallographic structure and electronic properties of ultrathin Pb films grown on a vicinal silicon surface are investigated with reflection high energy electron diffraction (RHEED) and specific resistivity measurement techniques. A Si(3 3 5) surface with a perfect distribution of monoatomic steps separated with (1 1 1) terraces induced by a submonolayer amount of Au is used as a substrate. In the early stage, Pb growth is anisotropic. Apparently, the presence of steps forces the growth of short crystalline Pb chains along the steps. The layer is amorphous in the perpendicular direction. With the increasing thickness, a phase transition takes place between 3 and 4 monolayers (ML) that makes crystalline order also across the terraces. A further increase in thickness causes the layer surface to repeat the substrate morphology. It consists of regularly distributed monoatomic steps and narrow (1 1 1) terraces." @default.
• W2000281292 created "2016-06-24" @default.
• W2000281292 creator A5086026556 @default.
• W2000281292 date "2008-10-01" @default.
• W2000281292 modified "2023-09-26" @default.
• W2000281292 title "Growth of Pb on Si(335)–Au surface" @default.
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• W2000281292 doi "https://doi.org/10.1016/j.jnoncrysol.2008.06.099" @default.
• W2000281292 hasPublicationYear "2008" @default.
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