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- W2000285436 abstract "Tunnel junctions with high concentrations of magnetic atoms at the tunnel barrier show a characteristic conductance quite different from the $Gensuremath{approx}mathrm{ln}(|mathrm{eV}|+kT)$ which is shown by low-concentration junctions. The conductance as a function of voltage has a narrow minimum which gets deeper as the temperature is lowered. This is the behavior which is expected to result from interactions making the exchange scattering processes inoperative at low voltages and temperatures." @default.
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- W2000285436 date "1972-08-21" @default.
- W2000285436 modified "2023-10-17" @default.
- W2000285436 title "Evidence for Interactions in Magnetically Doped Tunnel Junctions" @default.
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- W2000285436 doi "https://doi.org/10.1103/physrevlett.29.479" @default.
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