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• W2000287435 abstract "Abstract In order to understand the effects of N and O on the nucleation and growth process of dislocation loops in β-Nb-Zr alloys, Nb-3.1 wt%Zr alloys doped with N and O have been examined under irradiation in a high-voltage electron microscope. The nucleation of loops takes place very early in the irradiation at temperatures from 300 to 582 K, and loops grow in proportion to the cube root of irradiation time. The temperature dependence of the saturated loop density under a fixed electron flux shows four stages in the similar temperature regions as those which appear in the undoped alloy, whilst the loop density in the lower temperature regions increases with doping by N and O. These results, together with the dependence of loop density on electron flux, are analysed in terms of heterogeneous nucleation kinetics at N and O clusters. On the basis of the analysis the binding energies between an Nb interstitial and N and O clusters are estimated to be (7.2 ± 0.8) × 10−20 and (1.1 ± 0.1) × 10−19J, respectively." @default.
• W2000287435 created "2016-06-24" @default.
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• W2000287435 date "1985-07-01" @default.
• W2000287435 modified "2023-09-23" @default.
• W2000287435 title "Effects of impurities on the kinetic behaviour of point defects in electron-irradiated β-Nb-3.1 wt% Zr alloy" @default.
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• W2000287435 doi "https://doi.org/10.1080/01418618508237610" @default.
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