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- W2000312785 abstract "Electronic properties of the $mathrm{Si}(111)ensuremath{-}(7ifmmodetimeselsetexttimesfi{}7)$ surface are evaluated by scanning tunneling microscopy/spectroscopy (STM/STS) using artificially fabricated insulating trenches. When the surface is surrounded by a closed trench, the effect of the Schottky barrier naturally formed between the surface states and the bulk states is observed by STM. When a half-closed tape-shaped structure surrounded by the trench is fabricated, the current path is dominated by that through surface states. Its conductivity is estimated by measuring the voltage drop along the structure." @default.
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- W2000312785 date "1998-07-27" @default.
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- W2000312785 title "Electron Conduction through Surface States of the Si(111)-(<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mn>7</mml:mn><mml:mo>×</mml:mo><mml:mn>7</mml:mn></mml:math>) Surface" @default.
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- W2000312785 doi "https://doi.org/10.1103/physrevlett.81.890" @default.
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