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• W2000313129 abstract "Abstract Monodoping Li as acceptor, p-type ZnMgO thin films have been realized via dc reactive magnetron sputtering followed by a thermal anneal process. The conductivity of Li-doped films are transformed from highly resistant to p-type via anneal. This phenomenon may be associated with eliminating of Li Zn –Li i complexes and Li i . The optimized p-type Zn 0.96 Mg 0.04 O:Li thin film possesses a resistivity of 72.3Ω cm and a carrier concentration of 1.49 × 10 17 cm − 3 , while the electrical properties of Zn 0.84 Mg 0.16 O:Li thin film degrade in comparison to Zn 0.96 Mg 0.04 O:Li thin film. Moreover, the absorption spectra confirm Mg can be a good candidate for band gap engineering in p-type ZnO film." @default.
• W2000313129 created "2016-06-24" @default.
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• W2000313129 date "2008-06-01" @default.
• W2000313129 modified "2023-09-22" @default.
• W2000313129 title "Fabrication and post-anneal activation of p-type ZnMgO:Li film using dc reactive magnetron sputtering" @default.
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• W2000313129 doi "https://doi.org/10.1016/j.matlet.2007.12.046" @default.
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