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• W2000321358 abstract "We present a detailed analysis of trap states in InAlN/AlN/GaN double-channel high electron mobility transistors grown by pulsed metal organic chemical vapor deposition. By frequency dependent conductance measurements, trap densities and time constants at both InAlN/AlN/GaN interfaces were determined. Two types of traps, with a high density of up to ∼1014 cm−2 eV−1, were observed existing at the higher InAlN/AlN/GaN interface. On the other hand, the density dramatically decreased to ∼1012 cm−2 eV−1 for traps located at lower InAlN/AlN/GaN interface on which a low-temperature grown GaN (LT-GaN) layer was deposited. Additionally, photo-assisted capacitance-voltage measurements were performed to estimate deep-level defects, yielding a low density of 1.79 × 1011 cm−2 acting as negative fixed charges at the LT-GaN and lower InAlN interface." @default.
• W2000321358 created "2016-06-24" @default.
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• W2000321358 date "2013-05-02" @default.
• W2000321358 modified "2023-10-18" @default.
• W2000321358 title "Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors" @default.
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• W2000321358 doi "https://doi.org/10.1063/1.4802431" @default.
• W2000321358 hasPublicationYear "2013" @default.
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