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- W2000322102 abstract "The so-called “silicon monoxide” which is vaporized by electron gun bombardment always exhibits a stoichiometry of [O][Si] = 1, whereas that deposited from a crucible heated by the Joule effect can have any composition [O]/[Si] from 1 to 2 depending on the pressure and the rate of vaporization. Numerous investigators have found differences in the physical properties of such films, depending on the vaporization conditions. Several researches have investigated the internal stresses in these films which have always been found to be compressive with magnitudes of 108−109 dyn cm−2 depending on the film composition. Workers in our laboratory have studied the mechanical properties of silicon monoxide films prepared by electron gun bombardment (for which [O][Si] = 1 whatever the pressure and the vaporization rate). The thickness was between 0.2 and 2 μm. Stress-strain (σ-ε) data were obtained by two techniques: the bulge test and a tensile test with an apparatus built especially for these experiments. The Young modulus E and the Poisson coefficient v of what can be considered as the real “SiO” can be deduced: E ≈ 5 × 1011 dyn cm−2; v ≈ 0.17. The internal stresses were found to be compressive with magnitudes of about 2 × 108 dyn cm−2; this value depends strongly on the substrate dissolution conditions. Various types of σ−ε curves can be obtained depending on the number of runs and on the highest applied stress at the end of the previous run. A hardening of the films is observed during the different runs and after constant stresses have been applied. Modifications in the mechanical properties are induced by exposure to γ rays and by oxygen implantation." @default.
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- W2000322102 date "1982-03-01" @default.
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- W2000322102 title "Mechanical properties of SiOx thin films" @default.
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- W2000322102 doi "https://doi.org/10.1016/0040-6090(82)90446-1" @default.
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