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• W2000322158 abstract "Using room-temperature photoluminescence spectroscopy, we have studied the nonradiative recombination centres introduced by 35 keV proton implantation in semi-insulating GaAs. The effective capture cross-section value σ is deduced to be 1.1 × 10−12 cm2 with a Monte Carlo simulation. Through the analysis of the density of states of several possible defect configurations with Vienna ab initio simulation package, the nonradiative recombination centres are considered to be mainly composed of As vacancies and As-related defect complexes." @default.
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• W2000322158 date "2004-09-30" @default.
• W2000322158 modified "2023-09-23" @default.
• W2000322158 title "Carrier capture cross-section of nonradiative recombination centres introduced by proton implantation in GaAs" @default.
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• W2000322158 doi "https://doi.org/10.1088/0268-1242/19/11/020" @default.
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