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- W2000332776 abstract "The low-current I-V characteristics of AlxGa1−xAs-GaAs DH laser diodes have been investigated. The variation of the ideality factor is explained by taking into account the interaction of the thermionic-field emission and interface charge. Both theoretical calculations and experimental data are presented here to show the validity of our model." @default.
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- W2000332776 date "1980-02-01" @default.
- W2000332776 modified "2023-09-28" @default.
- W2000332776 title "Variation of the ideality factor in the curent-voltage characteristics of double-heterostructure diodes" @default.
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- W2000332776 doi "https://doi.org/10.1063/1.327704" @default.
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