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• W2000337105 abstract "Stress induced irregular tunneling current and interface trap characteristics were observed in non-planar substrate metal–oxide–semiconductor (MOS) capacitors. The oxide electric field distributions in the concave and convex corner regions of non-planar structure are different. After stressing, the inversion tunneling current was observed to decrease gradually in non-planar sample but decrease then increase in planar one. Moreover, the non-planar sample exhibits two peaks phenomenon in interface capacitance (Cit) after stress which is different from planar one with one peak. A model describing the role of deep depletion (DD) for sample with different treatments is also proposed for the observation." @default.
• W2000337105 created "2016-06-24" @default.
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• W2000337105 date "2014-01-01" @default.
• W2000337105 modified "2023-10-18" @default.
• W2000337105 title "Corner induced non-uniform electric field effect on the electrical reliability of metal–oxide–semiconductor devices with non-planar substrates" @default.
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• W2000337105 doi "https://doi.org/10.1016/j.sse.2013.10.009" @default.
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