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- W2000339936 abstract "Abstract The thermal growth of 3CSiC films at 820°C in acetylene (chosen among other hydrocarbons because of its high reactivity with Si) was performed and the resulting films were analyzed by nuclear reaction analysis (NRA), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). Films were grown on clean single domain 2 × 1 reconstructed Si (0 0 1) vicinal surfaces either in natural (C2H2) or in 99% deuterium enriched (C2D2) acetylene under 2 × 10−6Torr. In order to characterize the electronic structure and the short range order of the films, XPS and its by-product X-ray photodiffraction (XPD) were performed in situ in an analysis chamber connected to the preparation chamber. The growth kinetics was followed by measuring, ex situ, the amount of incorporated carbon using the 12C(d,p)13C reaction at 970 keV, while for determining the hydrogen incorporation in the films the D(3He,p)4He reaction at 700 keV was used. Also ex situ, the film morphology was followed by SEM as the thickness of the layer increased. By using these complementary techniques, phenomena like H incorporation, C in-diffusion and 3CSiC nucleation have been evidenced at the very beginning of the growth (amount of 12C incorporated in the films smaller than 1016 atoms/cm2). Besides, it was observed that the imperfect coalescence of 3CSiC nuclei determine the morphology of films grown during longer times." @default.
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- W2000339936 date "1998-03-01" @default.
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- W2000339936 title "First stages of low temperature and low pressure carbonization of Si (0 0 1) in acetylene" @default.
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- W2000339936 doi "https://doi.org/10.1016/s0168-583x(97)00699-x" @default.
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