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- W2000340076 abstract "In this article we consider a model which describes the oxidation process of silicon. The two phases, silicon and silicon-dioxide, are separated by a moving mixed zone of thickness O(ε), ε being a small parameter. We use the techniques of formal asymptotic analysis to derive a model with a sharp reaction front between the two phases. The resulting model agrees with other existing oxidation models on the basis of a sharp interface. In addition we give a proof for the existence, uniqueness, and qualitative behaviour of the solution to the system of ODEs obtained to leading order of the interfacial expansion." @default.
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- W2000340076 date "1998-10-01" @default.
- W2000340076 modified "2023-10-14" @default.
- W2000340076 title "Construction of an Asymptotic Model for the Oxidation Process of Silicon" @default.
- W2000340076 doi "https://doi.org/10.1002/(sici)1521-4001(199810)78:10<711::aid-zamm711>3.0.co;2-3" @default.
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