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- W2000341314 abstract "p-n-p doped GaAs structures with active n-doped layers with thicknesses of 250 nm>dn>15 nm and doping concentrations of 3×1018 cm−3>n≥1×1017 cm−3, and 6×1017 cm−3>p>7×1015 cm−3, have been grown by liquid phase epitaxy. The modulation of the n-channel conductivity σnn(Unp) by an external potential Unp between the p and n-layers has been measured at 77 and 300 K. The characteristic curves σnn(Unp) are interpreted by the modulation of the two-dimensional carrier concentration n(2) (Unp) with Unp and by the variation of the mobility μn(defn) on the effective channel thickness defn(Unp) . The sensitivity of the p-n-p structure to small variations in design parameters is shown for the threshold voltage Uthnp . In p-n-p specimens with n∼1×1017 cm−3, p<1016 cm−3 and dn≂40 nm, an unexpected enhancement of the conductivity up to one order of magnitude between 300 and 77 K is observed. This is explained essentially by a hole freeze out due to the high acceptor level of the Ge dopant in the p layers and simultaneous release of electrons in the n channel." @default.
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- W2000341314 date "1984-03-15" @default.
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- W2000341314 title "Modulation of then‐channel conductivity in liquid phase epitaxially grownp‐n‐pdoped GaAs submicron structures" @default.
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- W2000341314 doi "https://doi.org/10.1063/1.333409" @default.
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