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• W2000359196 abstract "Abstract In the series Ge4Se6−xTex (x = 0, 0.5, 1.0 or 1.5) bulk glasses and thin amorphous films prepared by vacuum evaporation at relatively low temperature or by flash evaporation show a conductivity difference of about three orders of magnitude for the same chemical composition. These differences are caused by a lower band gap in the films. After annealing the conductivity of the films approached that of the bulk glass. The conductivity differences are discussed in terms of chemical bonding and the resulting electronic states in amorphous lone-pair semiconductors." @default.
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• W2000359196 date "1987-07-01" @default.
• W2000359196 modified "2023-09-27" @default.
• W2000359196 title "The influence of preparation technique on the conductivity of thin amorphous Ge4Se6−xTex films" @default.
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• W2000359196 doi "https://doi.org/10.1016/0040-6090(87)90084-8" @default.
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