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• W2000360828 abstract "Heterostructured metal-CdSe-metal nanowires were fabricated by sequential electrochemical deposition of layers of Au and the semiconductor CdSe. Nonlinear I-V curves were observed, and a parameter retrieval model was used to extract the majority carrier mobility of 0.5cm2V−1s−1 for nanowires fabricated with zero deposition current during the exchange of the final CdSe and Au segments. This improved threefold with the application of a small current during the solution exchange. Values for the resistance and the electron density for these nanowires were determined." @default.
• W2000360828 created "2016-06-24" @default.
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• W2000360828 date "2008-03-17" @default.
• W2000360828 modified "2023-10-12" @default.
• W2000360828 title "Quantitative analysis of individual metal-CdSe-metal nanowire field-effect transistors" @default.
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• W2000360828 doi "https://doi.org/10.1063/1.2899629" @default.
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