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- W2000361250 abstract "We have formed a SiC interfacial buffer layer on AlN/Si substrates at a low temperature by low-pressure chemical vapor deposition (LPCVD) using monomethylsilane (CH 3 SiH 3 ; MMS), and grew 3C-SiC films on the low-temperature buffer layer by LPCVD using MMS. We investigated the surface morphology and crystallinity of the grown SiC films. It was found that the formation of the SiC buffer layer suppressed the outdiffusion of Al and N atoms from the AlN intermediate layer to the SiC films and further improved the surface morphology and crystallinity of the films." @default.
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- W2000361250 date "2014-02-01" @default.
- W2000361250 modified "2023-09-23" @default.
- W2000361250 title "Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates" @default.
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- W2000361250 doi "https://doi.org/10.4028/www.scientific.net/msf.778-780.251" @default.
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