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• W2000363598 abstract "Fe has been sequentially deposited under ultra-high vacuum, from less than 1 ML up to over 120 ML (1 ML refers to the GaSe surface, ≈8×1014 atoms/cm2), onto the clean (001) passive face of a 10-nm thick (≈12 layers) GaSe film epitaxially grown by MBE onto a Si(111)1×1-H substrate and kept at room temperature. From low-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS) measurements, a model in which Fe atoms intercalate into the layered semiconductor at room temperature is proposed. It assumes the formation of a ternary compound, which maintains the GaSe surface structure until saturation of the whole layered film by intercalated Fe, which would involve two Fe monolayers per pseudo-van der Waals gap." @default.
• W2000363598 created "2016-06-24" @default.
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• W2000363598 date "2000-10-01" @default.
• W2000363598 modified "2023-10-18" @default.
• W2000363598 title "Study of Fe deposition upon a layered compound: GaSe" @default.
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• W2000363598 doi "https://doi.org/10.1016/s0169-4332(00)00396-2" @default.
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