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- W2000369670 abstract "We present experimental and simulation results for polysilicon micromachined devices with a negative temperature coefficient of resistance. These were fabricated by a CMOS process with a customized sheet resistance for the second polysilicon layer. We first obtained an expression for the device resistivity, and then employed our simulation procedure to analyze both the steady-state and the time-varying response. The thermal efficiency is also examined. Explicit comparisons between simulation and experimental results show excellent agreement." @default.
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- W2000369670 date "1996-12-01" @default.
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- W2000369670 title "Simulation and physical response of negative temperature coefficient of resistance polysilicon micromachined structures" @default.
- W2000369670 doi "https://doi.org/10.1139/p96-849" @default.
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