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- W2000375541 abstract "Optical properties of single submonolayer InAs structures grown on GaAs (001) matrix are systematically investigated by means of photoluminescence and time-resolved photoluminescence. It is shown that the formation of InAs dots with 1 ML height leads to localization of excitons under certain submonolayer InAs coverages, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures." @default.
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- W2000375541 date "1995-09-25" @default.
- W2000375541 modified "2023-10-14" @default.
- W2000375541 title "Photoluminescence studies of single submonolayer InAs structures grown on GaAs (001) matrix" @default.
- W2000375541 doi "https://doi.org/10.1063/1.114361" @default.
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