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- W2000379725 abstract "Abstract There are usually two explanations for the physical reasons of the high injection effects in silicon bipolar transistors: one is the effective base widening effect proposed by Kirk, the other is the base conductivity modulation effect proposed by Webster, the emitter current crowding effect intensifies these two effects. In this paper, low temperature characteristics of these three important effects are analyzed and the dominant physical mechanism which determines the high injection effects at low temperatures is presented. The obtained calculate results are in agreement with the experiments." @default.
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- W2000379725 date "1995-08-01" @default.
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- W2000379725 title "Analysis of the high injection effects in silicon bipolar transistors at low temperatures" @default.
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- W2000379725 doi "https://doi.org/10.1016/0038-1101(94)00293-o" @default.
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