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- W2000383352 abstract "The immersion lithography for 45 nm generation has been developing aggressively for smaller critical dimension of semiconductor devices. The polarization lithography system is indispensable to have an advantage to use the immersion lithography with hyper NA (>1.0). As pattern size becomes smaller, mask induced polarization effects to polarization of exposure image seems not to be negligible. There are several issues about mask induced polarization. But dominant factor for mask induced polarization effect is not understood well. In this paper, in case of monolayer mask of att.PSM, degree of polarization (DoP) strongly depends on film thickness and extinction coefficient from simulation and experimental results. DoP depends on material factor. And in case of double layer mask, DoP depends on total film thickness and extinction coefficient of both upper layer and bottom layer. So, DoP depends also on structure of mask." @default.
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- W2000383352 date "2006-05-04" @default.
- W2000383352 modified "2023-09-23" @default.
- W2000383352 title "Study of mask-induced polarization effects on att. PSM in immersion lithography" @default.
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- W2000383352 doi "https://doi.org/10.1117/12.681878" @default.
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