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- W2000394522 abstract "We present two lateral p-i-n photodiodes for operation in the 400–900nm wavelength range. The design is compatible with typical 180nm CMOS process and yields high responsivity and low dark current independent of the geometry." @default.
- W2000394522 created "2016-06-24" @default.
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- W2000394522 date "2015-10-01" @default.
- W2000394522 modified "2023-09-27" @default.
- W2000394522 title "Lateral silicon photodiodes with extremely low dark current for visible and infra-red applications" @default.
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- W2000394522 doi "https://doi.org/10.1109/ipcon.2015.7323594" @default.
- W2000394522 hasPublicationYear "2015" @default.
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