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• W2000395535 abstract "The out-of-plane c, and in-plane a, lattice parameters of wurtzite gallium nitride (GaN) films, grown on the [0 0 0 1] basal plane of sapphire have been determined and the impact of ion implantation having dose between 5×1013 and 5×1015 cm−2 investigated. The thickness of the GaN layers was in the 1–3.5 μm range. The overall effect of the (0 0 0 1) GaN growth on (0 0 0 1) sapphire is biaxial compression in wurtzite α-GaN. Earlier X-ray studies have indicated that the films of GaN grow either purely in α-GaN phase or in α-GaN phase with a cubic β-GaN component. In contrast, our high-resolution X-ray diffraction (XRD) measurement revealed two isostructural polymorphs of α-GaN phases having different lattice parameters. Influence of ion implantation is to increase the values of lattice parameters a and c and could be rationalized in terms of an increase in the defects. At doses above 5×1015 cm−2, XRD analysis indicates the existence of an amorphous layer preventing the determination of a and c accurately." @default.
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• W2000395535 date "2002-05-01" @default.
• W2000395535 modified "2023-10-17" @default.
• W2000395535 title "X-ray determination of strain in ion implanted GaN" @default.
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• W2000395535 doi "https://doi.org/10.1016/s0168-583x(01)01189-2" @default.
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