Matches in SemOpenAlex for { <https://semopenalex.org/work/W2000396204> ?p ?o ?g. }
Showing items 1 to 75 of
75
with 100 items per page.
- W2000396204 endingPage "468" @default.
- W2000396204 startingPage "463" @default.
- W2000396204 abstract "Metal (gold)–anodic oxide–semiconductor structures of InSb are analyzed by high resolution Auger electron spectroscopy (AES) combined with Ar-ion etching. Because of high energy resolution different Auger line positions of In and Sb in the semiconductor and in the oxide can be clearly separated. Quantitative analysis of the depth profiles exhibits very homogeneous oxide films which consist of only one oxide phase of each constituent, i.e. In2O3 and probably Sb2O5. There is no deviation from the film composition at the oxide-semiconductor interface. The interface width is less extended than detectable with AES (d < 5 nm). Preliminary C–U measurements show a midgap interface state density of 2 × 1012 cm−2 eV−1. Mittels hochauflösender Auger-Elektronen-Spektroskopie (AES) in Verbindung mit Ar-lonenätzen werden Metall (Gold)–anodisches Oxid-Halbleiter-Strukturen auf der Basis von InSb untersucht. Auf Grund der hohen Energieauflösnng können unterschiedliche Linienpositionen von In und Sb im Halbleiter und im Oxid deutlich getrennt werden. Die quantitative Analyse der Tiefenprofile ergibt einen sehr homogenen Oxidfilm, der aus nur einer Oxidphase jedes Konstituenten besteht, und zwar aus In2O3 und wahrscheinlich Sb2O5. Es wird keine Abweichung von der Film-Zusammensetzung an der Oxid-Halbleiter-Grenzfläche beobachtet. Die Grenzschicht-Dicke ist geringer als mit AES nachweisbar (d < 5 nm). Vorllufige C-U-Messungen ergeben eine Grenzflächen-Zustandsdichte von 2 × 1012 cm−2 eV−1 in der Mitte der verbotenen Zone." @default.
- W2000396204 created "2016-06-24" @default.
- W2000396204 creator A5025884786 @default.
- W2000396204 creator A5070423635 @default.
- W2000396204 creator A5074625922 @default.
- W2000396204 creator A5082394056 @default.
- W2000396204 date "1984-02-16" @default.
- W2000396204 modified "2023-09-23" @default.
- W2000396204 title "Film and Interface Analysis of InSb MOS Structures" @default.
- W2000396204 cites W1967086526 @default.
- W2000396204 cites W1972432318 @default.
- W2000396204 cites W2028904614 @default.
- W2000396204 cites W2029279968 @default.
- W2000396204 cites W2033266425 @default.
- W2000396204 cites W2034551044 @default.
- W2000396204 cites W2048204907 @default.
- W2000396204 cites W2055387942 @default.
- W2000396204 cites W2067187835 @default.
- W2000396204 doi "https://doi.org/10.1002/pssa.2210810207" @default.
- W2000396204 hasPublicationYear "1984" @default.
- W2000396204 type Work @default.
- W2000396204 sameAs 2000396204 @default.
- W2000396204 citedByCount "4" @default.
- W2000396204 crossrefType "journal-article" @default.
- W2000396204 hasAuthorship W2000396204A5025884786 @default.
- W2000396204 hasAuthorship W2000396204A5070423635 @default.
- W2000396204 hasAuthorship W2000396204A5074625922 @default.
- W2000396204 hasAuthorship W2000396204A5082394056 @default.
- W2000396204 hasConcept C108225325 @default.
- W2000396204 hasConcept C113196181 @default.
- W2000396204 hasConcept C121332964 @default.
- W2000396204 hasConcept C178790620 @default.
- W2000396204 hasConcept C184779094 @default.
- W2000396204 hasConcept C185544564 @default.
- W2000396204 hasConcept C185592680 @default.
- W2000396204 hasConcept C192562407 @default.
- W2000396204 hasConcept C25442681 @default.
- W2000396204 hasConcept C2779851234 @default.
- W2000396204 hasConcept C2780646311 @default.
- W2000396204 hasConcept C43617362 @default.
- W2000396204 hasConcept C49040817 @default.
- W2000396204 hasConceptScore W2000396204C108225325 @default.
- W2000396204 hasConceptScore W2000396204C113196181 @default.
- W2000396204 hasConceptScore W2000396204C121332964 @default.
- W2000396204 hasConceptScore W2000396204C178790620 @default.
- W2000396204 hasConceptScore W2000396204C184779094 @default.
- W2000396204 hasConceptScore W2000396204C185544564 @default.
- W2000396204 hasConceptScore W2000396204C185592680 @default.
- W2000396204 hasConceptScore W2000396204C192562407 @default.
- W2000396204 hasConceptScore W2000396204C25442681 @default.
- W2000396204 hasConceptScore W2000396204C2779851234 @default.
- W2000396204 hasConceptScore W2000396204C2780646311 @default.
- W2000396204 hasConceptScore W2000396204C43617362 @default.
- W2000396204 hasConceptScore W2000396204C49040817 @default.
- W2000396204 hasIssue "2" @default.
- W2000396204 hasLocation W20003962041 @default.
- W2000396204 hasOpenAccess W2000396204 @default.
- W2000396204 hasPrimaryLocation W20003962041 @default.
- W2000396204 hasRelatedWork W1970072817 @default.
- W2000396204 hasRelatedWork W1971150004 @default.
- W2000396204 hasRelatedWork W1973671400 @default.
- W2000396204 hasRelatedWork W1987727462 @default.
- W2000396204 hasRelatedWork W2009461728 @default.
- W2000396204 hasRelatedWork W2013091238 @default.
- W2000396204 hasRelatedWork W2060787066 @default.
- W2000396204 hasRelatedWork W2090385264 @default.
- W2000396204 hasRelatedWork W4240090448 @default.
- W2000396204 hasRelatedWork W3174797372 @default.
- W2000396204 hasVolume "81" @default.
- W2000396204 isParatext "false" @default.
- W2000396204 isRetracted "false" @default.
- W2000396204 magId "2000396204" @default.
- W2000396204 workType "article" @default.