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- W2000396705 abstract "Vertical germanium on silicon p-i-n photodetectors were grown by molecular beam epitaxy and further processed by a quasi-planar mesa process. In this paper the influence of the -top contact layer on the optical responsivity was investigated. The -top contact was realized as highly antimony-doped silicon on a germanium heterostructure. With this additional heterostructure on top (relaxed silicon on relaxed germanium), the optical responsivity of the photodetector was broadened. The visible wavelength cutoff was shifted to , whereas the long wavelength cutoff remained at ." @default.
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- W2000396705 date "2010-01-01" @default.
- W2000396705 modified "2023-09-27" @default.
- W2000396705 title "Germanium on Silicon Photodetectors with Broad Spectral Range" @default.
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- W2000396705 doi "https://doi.org/10.1149/1.3261854" @default.
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